MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) Q1 Q2 (4) (5) Symbol Collector -Emitter Voltage (NPN) (PNP) VCEO Collector - Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continu

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) Q1 Q2 (4) (5) Symbol Collector -Emitter Voltage (NPN) (PNP) VCEO Collector - Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continu

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) Q1 Q2 (4) (5) Symbol Collector -Emitter Voltage (NPN) (PNP) VCEO Collector - Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continu

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) Q1 Q2 (4) (5) Symbol Collector -Emitter Voltage (NPN) (PNP) VCEO Collector - Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continu

MBT3946DW1T1G, SMBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-363/SC-88 CASE 419B STYLE 1 (3) Rating Symbol VCEO Collector -Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continuous (NPN) (PNP) Electrostatic Discharge IC ESD Value Total Package Dissipa

-power surface mount applications where board space is at a premium. * hFE, 100-300 * Low VCE(sat), < 0.4 V * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel * Device Marking: LMBT3946DW1T1G = 46 MAXIMUM RATINGS Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base Voltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Electrostatic Discharge 6 5 4 1 2 3 SOT-363/SC-88 We declare that the material of product compliance with RoHS requirements. 3 Symbol V CEO Value Unit Vdc 40 -40 V 60 -40 V EBO Q2 mAdc 200 -200 HBM>16000, MM>2000 6 5 LMBT3946DW1T1* Vdc IC TJ,Ts t g 1 Q1 4 6.0 -5.0 ESD 2 Vdc CBO THERMAL CHARACTERISTICS Characteristic Symbol (1) Total Package Dissipation PD T A = 25C Thermal Resistance Junction RJA to Ambient Junction and Storage LMBT3946DW1T1G *Q1 PNP Q2 NPN ORDERING INFORMATION Device Marking Shipping LMBT3946DW1T1G LMBT3946DW1T3G 46

-power surface mount applications where board space is at a premium. * hFE, 100-300 * Low VCE(sat), < 0.4 V * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel * Device Marking: LMBT3946DW1T1G = 46 MAXIMUM RATINGS Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base Voltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Electrostatic Discharge 6 5 4 1 2 3 SOT-363/SC-88 We declare that the material of product compliance with RoHS requirements. 3 Symbol V CEO Value Unit Vdc 40 -40 V 60 -40 V EBO Q2 mAdc 200 -200 HBM>16000, MM>2000 6 5 LMBT3946DW1T1* Vdc IC TJ,Ts t g 1 Q1 4 6.0 -5.0 ESD 2 Vdc CBO THERMAL CHARACTERISTICS Characteristic Symbol (1) Total Package Dissipation PD T A = 25C Thermal Resistance Junction RJA to Ambient Junction and Storage LMBT3946DW1T1G *Q1 PNP Q2 NPN ORDERING INFORMATION Device Marking Shipping LMBT3946DW1T1G LMBT3946DW1T3G 46

MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) Features * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Q1 Q2 (4) (5) MBT3946DW1T1* *Q1 PNP Q2 NPN MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) Electrostatic Discharge VCEO VCBO VEBO IC ESD Value Characteristic Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Vdc 60 -

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) Q1 Q2 (4) (5) Symbol Collector -Emitter Voltage (NPN) (PNP) VCEO Collector - Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continu

NP NPN NPN NPN PNP NPN Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 4. SC-88/ SOT-363 Surface Mount General Purpose Switching Duals Transistors 600 200 200 600 200 Min 60 40 40 40 40 NPN LMBT2907ADW1T1G LMBT3904DW1T1G LMBT3906DW1T1G LMBT2222ADW1T1G LMBT3946DW1T1G 1 3 35 10 - 35 - 2 (mA) 300 300 300 300 10 10 10 150 10 t r (ns) PNP 35 - 35 - 10 Max 100 100 100 100 100 t d (ns) Device 2 2F MA A2 XX 46 hFE @/I C VCEO (V) 8 LMBT2907ADW1T1G LMBT3904DW1T1G LMBT3906DW1T1G LMBT2222ADW1T1G LMBT3946DW1T1G 3 IC (mA) Device Marking Device NPN 1 3 NPN 35 40 - 35 - 2 1 PNP 200 - 200 - 225 3 2 225 80 - 225 - B A B A C t f (ns) NPN PNP 50 - 50 - 60 1 75 30 - 75 - 5 4 6 R1 3 R2 4 5 a 6 4 5 6 b 4 5 6 C 123 4 Style 200 300 250 300 250 t s (ns) PNP 35 - 35 - 25 fT (MHz) 5 6 1 2 Package d ( R1=10k R2=10k ) Leshan Radio Company, Ltd. http//:www.lrc.cn BIAS RESISTOR TRANSISTORS 1. SOT-723 Surface Mount Bias Resistor Transistors 35 160 80 100 8 80 60 80 15 160 80 80 100 35 160 80 80 8 80 60 80 15 160

MBT3946DW1T1G 863-BC847BDW1T1G 863-NST45010MW6T1G 863-BC847BPDW1T1G ON Semi Part No. Package MBT3904DW1T1G MBT3946DW1T1G BC847BDW1T1G NST45010MW6T1G BC847BPDW1T1G SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 VCEO IC (Max.) (V) (Max.) (A) 40/40 40/-40 45/45 -45/-45 50/-50 0.2/.2 0.2/-0.2 0.1/0.1 -0.1/-0.1 0.1/-0.1 Surface Mount Device For quantities greater than listed, call for quote. hFE Min. 100/100 100/100 200/200 220/220 200/200 ON Semiconductor HIGH-POWER BIPOLAR TRANSISTORS NPN 863-2N3055AG 863-2N3772G 863-2N5885G 863-2N5302G 863-2N5886G 863-MJ802G 863-TIP33CG 863-TIP35CG 863-2N3442G 863-MJE4343G PNP 863-2N5883G 863-2N5884G 863-2N5684G 863-TIP36CG NPN 863-NSS20601CF8T1G 863-NSS40301MZ4T1G 863-NSS60601MZ4T1G PNP 863-NSS12100UW3TCG 863-NSS12100XV6T1G 863-NSS20200LT1G 863-NSS40200LT1G 863-NSS40600CF8T1G NPN 863-MMBT918LT1G 863-MMBT2369ALT1G 863-MMBT2369LT1G 863-MMBTH10LT1G 863-MMBT4401LT1G 863-MMBT4401WT1G PNP 863-MMBT4403LT1G .062 .062 .067 .227 .067 1000 .042 .042 .046 .17 .046 15 20

.74 .262 .023 .086 .133 .783 1.43 .091 1.15 1.43 .065 .03 .048 .064 .219 .259 .221 .28 .24 .522 .441 .416 .441 1.47 3.36 .221 .11 .11 .198 .221 .236 .289 1.09 .659 1.52 .536 .221 .021 .066 .121 .567 1.21 .079 1.11 1.21 .06 .10 .043 .056 .04 .055 .038 .037 MBT3946DW1T1G SOT-363 BC847BPDW1T1G SOT-363 40 50 0.2 0.1 100 200 300 450 SOT-23 TO-92 Case 77 DPAK TO-220FP TO-220 TO-3 SOT-223 TO-218 SOT-363 ON Semiconductor PNP (Cont.) 863-BC856ALT1G 863-BC856BLT1G 863-MMBTA56LT1G 863-MPSA56RLRAG 863-BD140G 863-2N4920G 863-MJE172G 863-2N5195G 863-MJD45H11G 863-MJF45H11G 863-D45H11G 863-2N6491G 863-D45VH10G 863-2N5884G 863-2N5684G 863-TIP30CG 863-BCP53-16T1G 863-BCP53T1G 863-MJD32CG 863-TIP32CG 863-MJE253G 863-TIP42CG 863-TIP36CG 863-MJF15031G 863-MJE4353G 863-MJE15033G 863-MJE350G 863-MMBTA92LT1G 863-MPSA92G 863-PZTA92T1G 863-MJE5730G 863-MJE5850G 863-MMBT6520LT1G 863-MJE5851G 863-MJE5852G Complementary 863-MBT3946DW1T1G 863-BC847BPDW1T1G ON Semi Part No. Transistors ON SEMICONDUCTOR GENERAL PU

LBC846BPDW1T1G LBC847BDW1T1G LBC847BPDW1T1G LBC847CDW1T1G LBC847CPDW1T1G LBC848BDW1T1G C8 8 G LBC848BPDW1T1G LBC848CDW1T1G LBC848CPDW1T1G LBC856BDW1T1G LBC857BDW1T1G LBC857CDW1T1G LBC858BDW1T1G LBC858CDW1T1G LMBT2222ADW1T1G LMBT3904DW1T1G LMBT3906DW1T1G LMBT3946DW1T1G LMBT2907ADW1T1G LMBT5541DW1T1G LMBT5551DW1T1G LMBT5401DW1T1G LMBT5551DW1T1G LMBT5401DW1T1G LBC846ADW1T1G LBC846BDW1T1G LBC847ADW1T1G LBC847BDW1T1G LBC847APDW1T1G LBC847BPDW1T1G LBC848BDW1T1G LBC848BPDW1T1G LBC857ADW1T1G LBC858ADW1T1G LMUN5132DW1T1G LMUN5133DW1T1G LMUN5134DW1T1G LMUN5135DW1T1G LMUN5136DW1T1G LMUN5137DW1T1G LMUN5211DW1T1G LMUN5212DW1T1G LMUN5213DW1T1G U 5 G LMUN5214DW1T1G LMUN5215DW1T1G LMUN5216DW1T1G LMUN5230DW1T1G LMUN5231DW1T1G LMUN5232DW1T1G LMUN5233DW1T1G LMUN5234DW1T1G LMUN5235DW1T1G LMUN5236DW1T1G LMUN5237DW1T1G LMUN5311DW1T1G LMUN5312DW1T1G LMUN5313DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5330DW1T1G LMUN5331DW1T1G LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G LMUN5336DW1T1G LUMH14

77 1.81 0.91 45J1498 1.31 1.22 42K1280 0.53 --71J5852 0.67 0.29 0.49 45J1505 0.65 26K4466 1.39 1.18 42K1298 3.10 2.01 42K1288 0.97 0.70 42K1296 1.57 0.81 26K4467 1.39 1.29 26K4469 3.10 2.66 100 100 250 300 6-SOT-363 6-SOT-363 88H4689 83H7283 MBT3906DW1T1G MBT3946DW1T1G 40 40 0.2 0.2 (175954) 0.32 0.06 0.32 0.06 IC (A) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.15 hFE @ 2mA min. 110 110 200 120 180 110 110 200 50 Stock No. 96K6822 14M4488 96K6823 13M4851 14M4489 96K6824 96K6829 96K6830 Mfg. Part No. E E E D E D E D fT min. (typ.*) MHz 150 150 150 200 200 150 150 150 100 Ptot (mW) 600 600 600 600 600 600 600 600 360 Price Each 1-249 0.42 0.68 0.43 0.35 0.44 0.68 0.41 0.68 0.42 0.68 0.42 0.68 0.42 0.68 0.43 0.68 BISS TRANSISTORS FEATURES * Low collector-emitter saturation voltage, VCEsat * High collector current capability * High collector current gain hFE at high IC * High performance in reduced board space * Cost effective replacement for larger, medium power and power transistors NPN Mfg. Part No. PBSS461

88 GP XSTR NPN 40V 2 10000 .08 10000 MBT3904DW2T1 A SS SC88 DUAL GP XSTR 2 3000 .08 3000 MBT3906DW1T1 A SS SC88 GP XSTR PNP 40V 2 3000 .08 3000 MBT3906DW1T1G A SS SC88 GP XSTR PNP 40V 2 3000 .08 3000 MBT3946DW1T1 A SS SC88 GP XSTR DUAL 40V 2 3000 .08 3000 MBT3946DW1T1G A SS SC88 GP XSTR DUAL 40V 2 3000 .08 3000 MBT3946DW1T2 A SS SC88 GP XSTR DUAL 40V 2 3000 .08 3000 MBT3946DW1T2G A SS SC88 GP XSTR DUAL 40V 2 3000 .08 3000 MBT6429DW1T1 A SS SC88 GP XSTR DUAL 40V 2 3000 .0267 3000 MBT6429DW1T1G A SS SC88 GP XSTR DUAL 40V 2 3000 .0267 3000 MCH12140D B BBG MONO PHASE FREQ DETEC 1 98 5.00 98 B MCH12140DG B BBG MONO PHASE FREQ DETEC 1 98 5.00 98 B MCH12140DR2 B BBG MONO PHASE FREQ DETEC 1 2500 5.00 2500 B MCH12140DR2G B BBG MONO PHASE FREQ DETEC 1 2500 5.00 2500 B MCK12140D B BBG MECL PHASE FREQ DETEC 1 98 5.00 98 B MCK12140DR2 B BBG MECL PHASE FREQ DETEC 1 2500 5.00 2500 B MCK12140DR2G B BBG MECL PHASE FREQ DETEC 1 2500 5.00 2500 B MCR08BT1 A THY S0T223 .8A 200V SCR 2 1000 .187 1000 MCR08BT1G A THY S0