FDP060AN08A0 N-Channel PowerTrench(R) MOSFET 75 V, 80 A, 6 m Features Applications * R DS(ON) = 4.8 m (Typ.), VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * Qg(tot) = 73 nC (Typ.), VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor Drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82555 D D G G DS D2-PAK TO-220 G S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDB060AN08A0 FDP060AN08A0 Unit V DSS Drain to Source Voltage 75 V VGS Gate to Source Voltage 20 V Continuous (TC < 127oC, VGS = 10V) 80 A Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) 16 A Drain Current ID Pulsed E AS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note 1) 350 mJ Power dissipation 255 W Derate above 25oC 1.7 W/oC Operating and Storage Temperature o -55 to 175 C Thermal Characteristics oC/W RJC Thermal Resistance Junction to

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP060AN08A0 / FDB060AN08A0 N-Channel PowerTrench(R) MOSFET 75 V, 80 A, 6 m Features Applications * RDS(on) = 4.8 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * QG(tot) = 73 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82680 D D GD S G TO-220 G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDP060AN08A0 FDB060AN08A0 Unit V DSS Drain to Source Voltage 75 V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TC < 127oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V,

FDP060AN08A0 N-Channel PowerTrench(R) MOSFET 75V, 80A, 6.0m Features Applications * r DS(ON) = 4.8m (Typ.), V GS = 10V, ID = 80A * Electronic Valve Train Systems * Qg(tot) = 73nC (Typ.), VGS = 10V * DC-DC converters and Off-line UPS * Low Miller Charge * Distributed Power Architectures and VRMs * Low QRR Body Diode * Primary Switch for 24V and 48V systems * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82680 D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol V DSS Drain to Source Voltage Parameter Ratings 75 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 127oC, VGS = 10V) 80 A Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) 16 A Drain Current ID Pulsed E AS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note 1) 350 mJ Power dissipation 255 W Derate above 25oC 1.7 W/oC Operating and Storage Temperature o -55 to 175 C Thermal C

FDP060AN08A0 N-Channel PowerTrench(R) MOSFET 75V, 80A, 6.0m Features Applications * r DS(ON) = 4.8m (Typ.), V GS = 10V, ID = 80A * Starter / Alternator Systems * Qg(tot) = 73nC (Typ.), VGS = 10V * Electronic Power Steering Systems * Low Miller Charge * Electronic Valve Train Systems * Low QRR Body Diode * DC-DC converters and Off-line UPS * UIS Capability (Single Pulse and Repetitive Pulse) * Distributed Power Architectures and VRMs * Primary Switch for 24V and 48V systems Formerly developmental type 82680 D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol V DSS Drain to Source Voltage Parameter Ratings 75 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 127oC, VGS = 10V) 80 A Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) 16 A Drain Current ID Pulsed E AS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note 1) 350 mJ Power dissipation 255 W Derate above 25oC

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP060AN08A0 / FDB060AN08A0 N-Channel PowerTrench(R) MOSFET 75 V, 80 A, 6 m Features Applications * RDS(on) = 4.8 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * QG(tot) = 73 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82680 D D GD S G TO-220 G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDP060AN08A0 FDB060AN08A0 Unit V DSS Drain to Source Voltage 75 V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TC < 127oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V,

FDP060AN08A0 N-Channel PowerTrench(R) MOSFET 75V, 80A, 6.0m Features Applications * r DS(ON) = 4.8m (Typ.), V GS = 10V, ID = 80A * 42V Automotive Load Control * Qg(tot) = 73nC (Typ.), VGS = 10V * Starter / Alternator Systems * Low Miller Charge * Electronic Power Steering Systems * Low QRR Body Diode * Electronic Valve Train Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs Formerly developmental type 82680 * Primary Switch for 24V and 48V systems D DRAIN (FLANGE) GATE SOURCE DRAIN G GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 75 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 127oC, VGS = 10V) 80 A Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) 16 A Drain Current ID Pulsed EAS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note

FDP060AN08A0 N-Channel PowerTrench(R) MOSFET 75V, 80A, 6.0m Features Applications * r DS(ON) = 4.8m (Typ.), V GS = 10V, ID = 80A * 42V Automotive Load Control * Qg(tot) = 73nC (Typ.), VGS = 10V * Starter / Alternator Systems * Low Miller Charge * Electronic Power Steering Systems * Low QRR Body Diode * Electronic Valve Train Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs Formerly developmental type 82680 * Primary Switch for 24V and 48V systems D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 75 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 127oC, VGS = 10V) 80 A Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) 16 A Drain Current ID Pulsed EAS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP060AN08A0 / FDB060AN08A0 N-Channel PowerTrench(R) MOSFET 75 V, 80 A, 6 m Features Applications * RDS(on) = 4.8 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * QG(tot) = 73 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82680 D D GD S G TO-220 G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDP060AN08A0 FDB060AN08A0 Unit V DSS Drain to Source Voltage 75 V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TC < 127oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V,

FDP060AN08A0 / FDB060AN08A0 N-Channel PowerTrench(R) MOSFET 75 V, 80 A, 6 m Features Applications * RDS(on) = 4.8 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * QG(tot) = 73 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82680 D D GD S G TO-220 G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDP060AN08A0 FDB060AN08A0 Unit V DSS Drain to Source Voltage 75 V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TC < 127oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) Pulsed E AS PD TJ, TSTG 80 A 16 A Figure 4 A Single Pulse Avalanche Energy (Note 1) 350 mJ Power dissipation 255 Derate above 25oC Operating and Storage Temperature W 1.7 W/oC -55 to 175 C o Thermal Characteristics oC/W RJC Thermal Resis

mber 1 Polarity BVDSS Min. (V) Config. 4.5V ID (A) PD (W) Package FDI047AN08A01 N 75 Single 0.0047 .0087@6V 92 80 310 TO-262 (I2PAK) FDP047AN08A01 N 75 Single 0.0047 .0087@6V 92 80 310 TO-220 FDB060AN08A01 N 75 Single 0.006 .01@6V 99 80 285 TO-263 (D2PAK) FDP060AN08A01 N 75 Single 0.006 .01@6V 99 80 285 TO-220 FDB16AN08A01 N 75 Single 0.016 .029@6V 28 58 135 TO-263 (D2PAK) FDD16AN08A0_F085 N 75 Single 0.016 .029@6V 28 58 135 TO-252 (DPAK) FDP16AN08A01 N 75 Single 0.016 .029@6V 28 58 135 TO-220 FDB36321 N 100 Single 0.009 .015@6V 84 80 310 TO-263 (D2PAK) FDH36321 N 100 Single 0.009 .015@6V 84 80 310 TO-247 FDI36321 N 100 Single 0.009 .015@6V 84 80 310 TO-262 (I2PAK) FDP36321 N 100 Single 0.009 .015@6V 84 80 310 TO-220 FDB3652_F085 N 100 Single 0.016 .026@6V 41 61 150 TO-263 (D2PAK) FDI36521 N 100 Single 0.016 .026@6V 41 61 150 TO-262(I2PAK) FDP36521 N 100 Single 0.016 .026@6V 41 61 150 TO-220 FDB3672_F085 N 100 Single 0.028 .047@6V 24 44 120 TO-263 (D2PAK) FDD36721 N 100 Single 0.028 .047@6V 24 44

450 TO-247 FDH047AN08A0 75 Single 0.0047 .0087 @ 6V 92 80 310 TO-247 FDI047AN08A0 75 Single 0.0047 .0087 @ 6V 92 80 310 TO-262 (I2PAK) FDP047AN08A0 75 Single 0.0047 .0087 @ 6V 92 80 310 TO-220 FDB060AN08A0 75 Single 0.006 .01 @ 6V 99 80 285 TO-263 (D2PAK) FDP060AN08A0 75 Single 0.006 .01 @ 6V 99 80 285 TO-220 FDB16AN08A0 75 Single 0.016 .029 @ 6V 28 58 135 TO-263 (D2PAK) FDD16AN08A0 75 Single 0.016 .029 @ 6V 28 58 135 TO-252 (DPAK) FDP16AN08A0 75 Single 0.016 .029 @ 6V 28 58 135 TO-220 FDB3632 100 Single 0.009 .015 @ 6V 84 80 310 TO-263 (D2PAK) FDH3632 100 Single 0.009 .015 @ 6V 84 80 310 TO-247 FDI3632 100 Single 0.009 .015 @ 6V 84 80 310 TO-262 (I2PAK) FDP3632 100 Single 0.009 .015 @ 6V 84 80 310 TO-220 FDB3652 100 Single 0.016 .026 @ 6V 41 61 150 TO-263 (D2PAK) FDI3652 100 Single 0.016 .026 @ 6V 41 61 150 TO-262 (I2PAK) FDP3652 100 Single 0.016 .026 @ 6V 41 61 150 TO-220 FDS3672 100 Single 0.022 .028 @ 6V 28 7.5 2.5 SO-8 FDB3672 100 Single 0.028 .047 @ 6V 24 44 120 TO-263 (D2PAK) FDD3672 100 S

LED Discrete BC327A BC337A BC547A BC547B BC547C BC548A BC548B BC548C FDB050AN06A0 FDB060AN08A0 FDB060AN08A0 FDB14AN06LA0 FDC3616N FDC6036P FDC6322C FDC796N FDD14AN06LA0 FDD6670AL FDG327NZ FDG6318P FDG6318PZ FDG6321C FDG6324L FDM3300NZ FDN342P FDP050AN06A0 FDP060AN08A0 FDP060AN08A0 PNP Medium Power Transistor NPN Medium Power Transistor NPN General Purpose Amplifier NPN General Purpose Amplifier NPN General Purpose Amplifier Small Signal Transistor Small Signal Transistor Small Signal Transistor Discrete Automotive N-Channel PowerTrench(R) MOSFET, 60V, 80A, 5m, TO-263AB Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 @ VGS = 10V, TO-263/D2PAK Package Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 @ VGS = 10V, TO-263/D2PAK Package Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 @ VGS = 5V, TO-263/D2PAK Package 100V N-Channel PowerTrench MOSFET P-Channel 1.8V Specified PowerTrench MOSFET Dual N & P Channel, Digital FET 30V N-Channel

t Diode PWM MOSFET Synch. Rectifier PFC (Power Factor Correction) PFC MOSFET Synch. Rectifier PWM MOSFET Optocoupler Suggested Products Bridge Rectifier 2KBP10M PFC IC ML4821 PFC MOSFET FQA24N50 Boost Diode ISL9R860 PWM MOSFET Synch. Rectifier FQH18NH50V2 FDP060AN08A0 H11A817 MOC819 GBU4M FAN4810 FCP11N60 IRL9R1560 FQA24N50 FDP047AN08A0 GBU6M FAN4822 FDH44N50 RHRP860 FQH27N50 FDP3652 FQH44N50 FDP3632 KBL10 RHRP1560 FCP11N60 Optocoupler FQP90N10V2 FCP20N60 www.fairchildsemi.com/acdc 24 AC/DC Switch Mode Power Supply Design Guide Design Ideas 500W Telecom/Server ZVS Phase-Shift Full Bridge Switch Mode Power Supply Boost Diode PWM MOSFET Synch. Rectifier PFC (Power Factor Correction) PFC MOSFET Synch. Rectifier PWM MOSFET Optocoupler Suggested Products Bridge Rectifier 2KBP10M PFC IC ML4821 PFC MOSFET FQA24N50 Boost Diode PWM MOSFET ISL9R860 FQH18N50V2 Synch. Rectifier H11A817 MOC819 GBU4M FAN4810 FCP11N60 IRL9R1560 FQA24N50 FDP047AN08A0 GBU6M FAN4822 FCP20N60 RHRP860 FDH27N50 FDP3652 FDH44N50 RHRP1

CK NO. Mfr. Mfr. Part No. Single N-Channel (Cont.) 512-FDP050AN06A0 512-FDB5800 512-FDP5800 512-FDP80N06 512-FQP85N06 512-FDPF035N06B_F152 512-FDMS86550ET60 512-FDMS5360L_F085 512-FDB024N06 512-FDP025N06 512-FDBL0110N60 512-FDBL86561F085 512-FDP75N08A 512-FDP060AN08A0 512-FDB045AN08A0 512-FDP047N08 512-FDB031N08 512-FDA032N08 512-FDP023N08B_F102 512-FDC3512 512-FDS3590 512-FDS3580 512-FDMS3572 512-FDS3572 512-FDMC86320 512-FDMS86310 512-FDMS86300 512-FDMS86320 512-FDMD8280 512-FDD86326 512-FDMC86340ET80 512-FDMC86340 512-FDMS039N08B 512-FDMS86322 512-HUF75545S3ST 512-HUF75545P3 512-FDP86363_F085 512-FDB86360_F085 512-FDB86363_F085 512-FDMS86350ET80 512-FDP032N08B_F102 512-FDBL0150N80 512-FDBL86361F085 512-BSS123L 512-BSS123 512-FQT7N10LTF 512-FQT7N10TF 512-FDMA86108LZ 512-IRFM120ATF 512-FDC3612 512-FDT86106LZ 512-FDMA86151L 512-FDT86113LZ 512-FDT3612 512-FDD86113LZ 512-FDM3622 512-FDS3692 512-FQD7N10LTM 512-FDT86102LZ 512-FDD1600N10ALZD 512-FDS86141 512-FDMS86102LZ 512-FDMS3672 512-FDS3672 512-FD

FDP13AN06A0 FDD13AN06A0 FDB20AN06A0 FDP20AN06A0 FDD20AN06A0 Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard FDH038AN08A1 FDB045AN08A0 FDP047AN08A0 FDB060AN08A0 FDP060AN08A0 FDB16AN08A0 FDP16AN08A0 FDD16AN08A0 Level Level Level Level Level Level Level Level Qg Typ (nC) @VGS=10V ID (A) PD (W) Package .014@5V .014@5V .014@5V 0.022 0.022 0.022 0.04 0.107 24 24 25 16 16 16 8.4 4.2 61 61 50 41 41 41 20 11 125 125 125 75 75 75 50 25 TO-263 (D2PAK) TO-220 TO-252 (DPAK) TO-220 TO-263 (D2PAK) TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK) 0.0035 0.0038 0.0038 0.005 0.005 0.007 0.007 0.0105 0.0105 0.0105 0.0135 0.0135 0.0135 0.02 0.02 0.02 - 95 95 95 61 61 51 51 28 28 28 22 22 22 15 15 15 80 80 80 80 80 80 80 75 75 50 62 62 50 45 45 45 310 310 310 245 245 175 175 135 135 135 115 115 115 90 90 90 TO-263 (D2PAK) TO-262 (I2PAK) TO-220 TO-263 (D2PAK) TO-220 TO-263 (D2PAK) TO-220 TO-263 (D2PAK) TO-220 TO-252 (DPAK) TO-263